中文摘要：

选取了HICUM,VBIC和AgilentHBT（AHBT）三种模型,介绍并分析了不同模型应用在磷化铟（InP）异质结双极型晶体管（HBT）器件模型抽取中的特点。HBT模型中的载流子渡越时间方程直接决定模型用于HBT器件截止频率表征精度,进而影响Pin-Pout和IMD3等非线性仿真精度。在HICUM,VBIC和AHBT模型忽略各自衬底寄生网络,保持三类模型本征网络一致的情况下,着重分析了三种模型用于InP HBT器件载流子渡越时间和特征频率曲线建模精度。其中HBT器件发射极尺寸为8μm×3μm,频段为DC到67 GHz。最终评估结果表明,AHBT比另外两种模型更适用于InP HBT器件的模型抽取,同时也发现AHBT在电流更高区域的精度缺陷。

英文摘要：

Three models were selected,i.e.HICUM,VBIC and AgilentHBT（AHBT）,and the model extraction characteristics of HICUM,VBIC and AHBT used in the InP heterojunction bipolar transistor（HBT）devices were introduced and analyzed.The characterization precision of the cut-off frequency fTfor the model used in the InP HBT devices was directly determined by the carrier transit time equation,thereby affecting the nonlinear simulation accuracy,such as Pin-Pout and IMD3.The accuracy of the carrier transit time and fT modeling of VBIC,HICUM and AHBT used in the InP HBT devices were analyzed emphatically under the condition of maintaining the three models of the same intrinsic network and ignoring the substrate parasitic network.The emitter size of the HBT device is 8μm×3μm,and the frequency band is DC to67 GHz.The final assessment result indicates that AHBT is more suitable for the model extraction of the InP HBT devices than VBIC and HICUM,while AHBT is not precise enough inhigher current region.