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Recent progresses on InGaN quantum dot light-emitting diodes
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TN312.8[电子电信—物理电子学] O471.1[理学—半导体物理;理学—物理]
  • 作者机构：[1]Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
  • 相关基金：Acknowledgements This work was supported by the National Basic Research Program of China （Nos. 2013CB632804, 2011CB301900 and 2012CB3155605）, the National Natural Science Foundation of China （Grant Nos. 61176015, 61210014, 51002085, 61321004, 61307024 and 61176059）, and the High Technology Research and Development Program of China （Nos. 2011AA03Al12, 2011AA03A106, 2011AA03A105 and 2012AA050601）.
作者： Lai WANG Wenbin LV Zhibiao HAO Yi LUO[1]
关键词： 白光发光二极管, INGAN, 量子点, 气相外延生长, 可见光发射, LED, 物理模型, 应变松弛, quantum dot （QD）, InGaN, light emitting diode （LED）, quantum confined Stark effect （QCSE）
中文摘要：

InGaN 量点(QD ) 在最近的年里吸引了许多研究兴趣让他们的潜力认识到长波长来自绿色的可见排放到红，它能铺平一条道路制作射出二极管(LEDs ) 的没有黄磷的白光。在这篇论文，我们在 InGaN QD LEDs 上报导了我们的最近的进步，讨论在自我装配的 InGaN QD 被奉献给紧张松驰的基本物理模型，有由金属的一个生长打断方法的 InGaN QD 的生长器官的蒸汽阶段取向附生，优化在多层的 InGaN QD ，绿色的示范，黄绿色、红的 InGaN QD LEDs ，和未来挑战轧了障碍生长。

英文摘要：

InGaN quantum dots （QDs） have attracted many research interests in recent years for their potentials to realize long wavelength visible emission from green to red, which can pave a way to fabricate the phosphor-free white light emitting diodes （LEDs）. In this paper, we reported our recent progresses on InGaN QD LEDs, the discussions were dedicated to the basic physics model of the strain relaxation in self-assembled InGaN QDs, the growth of InGaN QDs with a growth interruption method by metal organic vapor phase epitaxy, the optimization of GaN barrier growth in multilayer InGaN QDs, the demonstration of green, yellow-green and red InGaN QD LEDs, and future challenges.

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高速InP基半导体电光调制器行波电极结构研究
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高饱和电流光电探测器在低噪声系数和高增益RoF光链路中的应用
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日盲雪崩探测器滤波膜系的优化设计及器件性能的影响
GaN hexagonal pyramids formed by a photo-assisted chemical etching method
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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
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  • 被引量:406