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High-performance electroabsorption modulator
  • ISSN号：1674-4926
  • 期刊名称：《半导体学报：英文版》
  • 时间：0
  • 分类：TN929.11[电子电信—通信与信息系统;电子电信—信息与通信工程] TN248.4[电子电信—物理电子学]
  • 作者机构：[1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 相关基金：Project supported by the National High Technology Research and Development Program of China （No. 2006AA01Z256）, the State Key Development Program for Basic Research of China （Nos. 2006CB604901, 2006CB604902）, and the National Natural Science Foundation of China （No. 90401025）.Acknowledgement The authors would like to thank Wang Baojun, Zhou Fan, Shu Huiyun for their experimental help, and Zhao Lingjuan, Wang Lufeng, Bian Jing, An Xin for their support on the device test.
作者： 张伟, 潘教青, 朱洪亮, 王桓, 王圩
关键词： 电吸收调制器, InGaAsP, 量子阱混杂, 性能, 离子注入, 输出端口, 气相外延, 金属有机, electroabsorption modulator, quantum well intermixing, intra-step quantum well
中文摘要：

Corresponding author. E：mail： zw2006@semi.ac.cn

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期刊信息
  • 《半导体学报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编：李树深
  • 地址：北京912信箱
  • 邮编：100083
  • 邮箱：cjs@semi.ac.cn
  • 电话：010-82304277
  • 国际标准刊号：ISSN：1674-4926
  • 国内统一刊号：ISSN：11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 被引量:7754