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Fracture mechanics analysis on Smart-Cut technology. Part 1： Effects of stiffening wafer and defect interaction

ISSN号：0567-7718
期刊名称：《力学学报：英文版》
时间：0
分类：O34[理学—固体力学;理学—力学] TB301[一般工业技术—材料科学与工程]
作者机构：[1]Centre for Advanced Materials Technology (CAMT),School of Aerospace, Mechanical and MechatronicEngineering (AMME) J07, University of Sydney,Sydney, NSW 2006, Australia, [2]Department of Engineering Mechanics,Tsinghua University, 100084 Beijing, China
相关基金：The project supported by the Australian Research Council （ARC）, the National Natural Science Foundation of China （10525210 and 10732050） and 973 Project （2004CB619303）. BG, HYL, and YWM are, respectively, Postdoctoral Fellow, Research Fellow, and Federation Fellow supported by the ARC and tenable at the University of Sydney.

作者： Bin Gu, Hongyuan Liu, Yiu-Wing Mai, Xi Qiao Feng, Shou Wen Yu

关键词： Smart-Cut技术, SOI材料, 固体力学, 微结构, Smart-Cut technology , Silicon-on-insulatorwafer , Crack growth , Fracture mechanics , Stress intensityfactor

中文摘要：

在现在的纸，连续统破裂力学被用来分析聪明切割的过程，启用各种各样的 silicon-on-insulator (SOI ) 的高度有效的制造的一种最近确定的离子切割技术在厚度的高一致性的晶片。使用不可分的变换和 Cauchy 单个不可分的方程方法，模式 -- 打开排水量我和 mode-II 压力紧张因素，精力版本率，和裂缝被导出以便检验涉及聪明切割的过程的几重要破裂机制。缺点生长上的缺点相互作用和使硬的晶片的效果被调查。数字结果显示 stiffener/handle 晶片能有效地阻止施主晶片 blistering 和脱落，但是它由减少减慢缺点生长 SIF 的大小。缺点相互作用也在 SOI 晶片的切开的进程起一个重要作用，但是它的贡献强烈取决于尺寸，间隔和缺点的内部压力。最后，一个分析公式被导出估计为切开 SOI 晶片要求的培植剂量。

英文摘要：

In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator （SOI） wafers of high uniformity in thickness. Using integral transform and Cauchy singular integral equation methods, the mode-I and mode-II stress intensity factors, energy release rate, and crack opening displacements are derived in order to examine several important fracture mechanisms involved in the Smart-Cut process. The effects of defect interaction and stiffening wafer on defect growth are investigated. The numerical results indi- cate that a stiffener/handle wafer can effectively prevent the donor wafer from blistering and exfoliation, but it slows down the defect growth by decreasing the magnitudes of SIF＇s. Defect interaction also plays an important role in the splitting process of SOI wafers, but its contribution depends strongly on the size, interval and internal pressure of defects. Finally, an analytical formula is derived to estimate the implantation dose required for splitting a SOI wafer.