中文摘要：

ZnCulnS／ZnSe／ZnS量子点是一种无毒，无重金属的“绿色”半导体纳米材料。在研究中，制备了三种尺寸的znCuIns／znse／zns核壳量子点，其直径分别为3．3，2．7，2．3nm。通过测量不同尺寸的ZnCulnS／ZnSe／ZnS量子点的光致发光光谱，其发射峰值波长随尺寸的减小而蓝移。其吸收峰值波长和发射峰值波长分别是510，611（3．3nm），483，583（2．7nm）以及447，545nm（2．3rim）。ZnCuInS／ZnSe／ZnS量子点具有显著的尺寸依赖效应。ZnCuInS／Znse／Zns量子点的斯托克斯位移分别为398meV（3．3nm），436meV（2．7nm）以及498meV（2．3nm），这样大的斯托克斯位移证明，zncuInS／znSe／zns量子点的发光机制与缺陷能级有关。同时，对直径为3．3nm的ZnCulnS／ZnSe／ZnS量子点进行了温度依赖的光致发光光谱的测量，当温度为15-90℃时，该量子点发射峰值波长随温度的升高而红移，发光强度随温度的升高而降低，说明Zn-CuIns／znse／zns量子点是以导带能级与缺陷能级之间跃迁为主的复合发光。

英文摘要：

ZnCuInS/ZnSe/ZnS quantum dots were non-toxic and heavy-metal free semiconductor nanocrystals. In the present pa- per, ZnCuInS/ZnSe/ZnS core/shell/shell quantum dots were prepared with the particle size of 3.3, 2.7 and 2.3 nm. The photo- luminescence of ZnCulnS/ZnSe/ZnS quantum dots with different size were measured, and the wavelength of peak was blue-shif- ted with decreasing the diameter. The wavelength of absorption peaks and photolumineseence peaks were 510 nm, 611 nm （3.3 nm）, 483 nm, 583 nm （2.7 nm） and 447 nm and 545 nm（2.3 nm）. The obvious size-dependence of ZnCulnS/ZnSe/ZnS quan- tum dots was shown. The Stokes shifts of ZnCuInS/ZnSe/ZnS quantum dots were 398 meV （3. 3 nm）, 436 meV （2.7 nm） and 498 meV （2.3 nm）. Such large Stokes shifts indicate that the emission should be ascribed to the defect-related recombination. The temperature-dependent photolumineseenee of ZnCuInS/ZnSe/ZnS quantum dots with the particle size of 3. 3 nm were meas- ured. The wavelength of peaks was red-shifted with increasing temperature and the intensity of photolumineseence spectra was decreased with increasing temperature. Therefore, the emission was concluded to be the transition from the conduction band to defect state.