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中文摘要：
采用射频磁控溅射法在不同Ar/O2流速比下制备铌镁酸铋（Bi1.5MgNb1.5O7,BMN）薄膜。通过X线衍射仪（XRD）、原子力显微镜（AFM）和阻抗分析仪分别对薄膜的相结构、表面形貌和介电性能进行表征。结果表明：经过700℃O2气氛下退火处理,BMN薄膜形成立方焦绿石单相结构。当Ar/O2流速比为2∶1时溅射薄膜的表面粗糙度较小,漏电流较低,具有高的介电常数、低的介电损耗（1 MHz的测试频率下介电常数和介电损耗分别为158和0.4%）,并且在0.8 MV/cm的外加电场下介电可调率和优质因子分别为16.4%和36。
英文摘要：
Bismuth magnesium niobate（ Bi1. 5MgNb1. 5O7,BMN） films were deposited by radio frequency（ RF） magnetron sputtering under different Ar/O2flow rate ratio. The phase structure,the microstructure and the dielectric properties were investigated by X-ray diffraction（ XRD）,atomic force microscopy（ AFM） and precision impedance analysis meter,respectively. Results showed that the films formed single cubic pyrochlore structure after annealed at 700 ℃ in oxygen atmosphere. The BMN film deposited at Ar / O2flow rate ratio of 2∶ 1 had the lowest surface roughness,and exhibited large dielectric constant and low dielectric loss（ 158 and 0. 4% at 1 MHz）. The dielectric tunability and the figure of merit（ FOM） value were 16. 4% and 36 at a dc bias field of 0. 8 MV/cm.
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