中文摘要：

合成了新的配合物EuL3phen,[HL=4,4,4-三氟-1-（4’-间三联苯基）-1,3-丁二酮,phen=邻菲咯啉]。采用元素分析,红外光谱,质谱对该配合物的结构进行了表征。该化合物在半导体InGaN芯片发出的近紫外光激发下,发出铕（Ⅲ）离子5D0—7FJ（J=0~4）跃迁特征红光,最大发射峰位于613 nm,发光量子效率为13%。配合物寿命为470μs,寿命曲线很好地和单指数衰减拟合曲线相吻合。配合物热稳定性达到220℃,满足制备LED器件的要求。将配合物EuL3phen和半导体395 nm发射InGaN芯片组合,成功地制备了红色发光二极管。发光二极管的色坐标、发光效率、配合物和硅胶质量比相关,在配合物和硅胶质量比为1∶25时,器件色坐标为x=0.64,y=0.35,光效为0.89 lm.W-1。该配合物是充当制作白光LED用的潜在的红色发光组分。

英文摘要：

A new europium （ Ⅲ ） complex, EuL3 phen, [ HL = 4,4,4-trifluoro-]- （4 ＇-m-terphenyl）-1, 3-butanedione, phen = 1, 10-phenanthroline-] was synthesized. Its structure was characterized by elemental analysis, IR and FAB-MS. The complex exhibits strongly red emission due to the S D0-7FJ（J = 0-4） transitions of Eu^3＋ ions under irradiation of UV or 395 nm emission light of InGaN chip. The strongest emission peak is located at 613 nm. The luminescence quantum yield is13%. The lifetime of the complex is 470 μs. The decay curve can be fit with a single exponential. The thermogravimetrie analyses eurve for the complex shows that the complex is stable up to 220 ℃, which meets the requirement of fabrication of LED deviee. A red luminescent LED was sueeessfully fabrieated by coating complex EuL3 phen onto 395 nm emitting InGaN chip. The mass ratio of complex to the silicone is related to the chromaticity coordinates and efficiency of fabricated LED. When the mass ratio of complex to the silicone is 1 ： 25, the chromaticity coordinates of the fabricated LED with the europium complex are x=0. 64 and y=0. 35 and the efficiency achieves 0. 89 lm · W^-1. The results indicate that the complex may act as a potential red component in the fabrication of white LEDs.