中文摘要：

采用磁控溅射工艺制备了V2O5薄膜.通过改变制备工艺中基片温度和氧分压两个条件,研究了薄膜的晶相组成、表观形貌以及氧化物中钒和氧元素的化合价态.当基片温度升高时,V2O5薄膜中颗粒结晶由细长针状转变为平行于基片的片状,V^5＋状态保持不变,但723K时氧结合能向高键能态移动.氧分压较低时,薄膜表面有部分V^4＋态存在,但存在较多的高键能氧,此时薄膜中晶粒尺寸较小.随着氧分压的提高,晶粒逐渐长大,钒被氧化为高价态,但此时薄膜中高键能态氧降低.较高的基片温度和氧分压有利于薄膜中晶粒的生长;低氧分压不利于钒的氧化,高氧分压可以将钒氧化为高价态,同时,氧高键能态降低.

英文摘要：

The properties of vanadium pentoxide （ V2O5 ） films deposited by reactive DC sputtering from vanadium target were investigated. In particular, the chemical state of elements and microstructure of films were analyzed by X-ray photoelectron spectroscopy, X-ray diffraction and field-emission scanning electron microscopy. The percentage of oxygen in the sputtering chamber affects the chemical state of vanadium in the film. Higher oxygen partial pressure makes to vanadium to be oxidized from V^4＋ to V^5＋ , and the grain size increased with grain a shape of needles, but the content of oxygen with high binding energy decreases. Higher temperature of substrates causes the grains to grow from needles to large flakes lying parallel to the substrate, and vanadium is oxidized to the stable high binding energy states.