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外腔半导体激光器的设计与高次谐波稳频
  • 期刊名称：红外与激光工程，36卷，第2期，2007，152～154
  • 时间：0
  • 分类：TN248.42[电子电信—物理电子学]
  • 作者机构：[1]北京大学信息科学技术学院量子信息与测量教育部重点实验室,北京100871
  • 相关基金：国家重点基础研究课题资助项目（2001CB309308;2005CB3724500）;国家自然科学基金重大项目资助项目（60490280）;国家自然科学基金资助项目（60271003）
  • 相关项目：新一代光学频标物理及技术的基础研究
关键词： 外腔半导体激光器, 连续可调范围, 谐波稳频, External cavity semiconductor laser, Continuous tuning range, Harmonic frequency stabilization
中文摘要：

首先讨论了半导体激光器外腔结构参量对激光连续可调范围影响的理论计算方法，给出了Littrow结构外腔半导体激光器调谐范围的计算结果。然后介绍了半导体激光器外腔结构参量的具体设计，利用该设计得到了出射激光线宽小于1MHz、连续可调谐范围可达3GHz的780nm波段外腔半导体激光器。接着讨论了利用腔外饱和吸收谱的三次谐波稳频方法对半导体激光器进行稳频，优化激光频率短期稳定度的方法。最后根据该优化方法设计出稳频系统对半导体激光器进行稳频，得到了稳定度达到10^-12量级的半导体激光输出。

英文摘要：

The theoretical results on the relation between the continuous wavelength tuning range of Littrow configuration for external cavity semiconductor laser （ECL） and its geometric parameters are reported. A Littrow configuration ECL is designed, which features that the continuous tuning range is more than 3 GHz and the linewidth is less than 1 MHz. The short-term stability of ECL based on saturation absorption third-harmonic frequency stabilization is optimized to the order of 10^-12.

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