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中文摘要：
通过改进RIE的刻蚀工艺和绝缘层的生长工艺,在SiO2/Si衬底上制备出了性能良好的超导Nb/A1-AlOX/Nb隧道结。采用CF4作为刻蚀气体,降低了RIE对结势垒层和衬底SiO2层的刻蚀。使用PECVD生长绝缘层SiO2,改善了绝缘性能,从而降低了隧道结的漏电流。
英文摘要：
By improving etching process and insulating layer growth process,we fabricated superconducting tunnel junctions with good performance.In order to decrease the etching of oxide layer and substrate during RIE,CF4 was used as etching gas.SiO2 is grown by using PECVD,to improve the performance of SiO2 insulation layer.Greatly improve the performance of the tunnel junction.
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