中文摘要：

提出一种利用噪声抵消技术减小热噪声因子的互补金属氧化物半导体（CMOS）宽带低噪声放大器电路.它具有不平衡变换器可转换单端信号为差分信号,无需外接平衡-不平衡变换器,也未采用电感匹配技术,进一步减小了芯片的面积.该低噪声放大器基于TSMC 0.18μm RF CMOS 1.8V的工艺设计,仿真和验证采用Cadence公司的Spectre工具.结果表明：在150～600MHz频带内的噪声系数为3.9dB,输入匹配参数S11小于-11.7dB,输入3阶截点IIP3为1.03dBm.

英文摘要：

In this paper,a wide-band complementary metal oxide semiconductor（CMOS） with low noise amplifier is presented,in which the noise-canceling technique is exploited to reduce the thermal noise of input transistor.The LNA combining with active balun can convert the single-ended signal into differential signals,so off-chip balun is not needed.Furthermore,the LNA is inductor-less,which can reduce chip area.The LNA is designed in TSMC 0.18 μm RF CMOS process with 1.8 V supply voltage,simulated and verified by using the Spectre tools of Candence.The simulation results show that the noise figure is less than 3.9 dB,the input match is less than-11.7 dB rang from 150 MHz to 600 MHz and IIP3 is 1.03 dBm.