在尿素-NaBr-KBr-甲酰胺体系中用脉冲电沉积的方法制备Bi2Sb3Cex及Bi2Sb3Ndx合金薄膜。通过X射线能谱(EDS)及X射线衍射(xRD)分别确定其化学成分、分析其晶型结构。在最佳工艺条件下,稀土元素达到最大填充量,合金薄膜的组成为Bi2Sb3Ce:及Bi2sb3Nd0l。合金薄膜是由斜方六面体BiSb和四面立方结构的单质Ce、Nd组成。探索了不同稀土填充的Bi-Sb半导体热电材料的电学性能。
Bi2Sb3Cex and Bi2Sb3Ndx alloy films were prepared by PRC method (Pulse Reverse Current) in carbamide-NaBr-KBr-methanamide system. Their chemical composition was determined by EDS and the crystalline structure was analyzed by XRD. Under the optimal processing condition, there is a maximum filling quantity of the REE and the alloy films are composed of Bi2Sb3Ce2 and Bi2Sb3Nd0.1, which are rhombic hexahedral BiSb and tetrahedral cubic monoplasmatic Ce and Nd. The conductivity of Bi-Sb semiconductor pyroelectric materials stuffed by different REEs was also discussed.