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N2和NH3退火对原子层淀积铪铝氧栅介质C-V 特性的影响
  • 期刊名称：固体电子学研究与进展，Vol.29, No.2, pp.179-182, 2009
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  • 相关项目：集成电路的基础材料研究
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N2和NH3退火对铪铝氧栅介质C-V特性的影响