中文摘要：

MnGa 电影被磁控管在热地氧化的 Si 上劈啪作响种(Si/SiO ₂) 和玻璃底层。与不同 underlayers 在单个水晶的 Si (100 ) 底层上种的电影为比较作好准备。Si/SiO ₂ 底层对比玻璃底层种 high-coercivity MnGa 电影更合适，这被发现，它是 isolated-island-like 生长的结果。9.7kOe 的 coercivity 能为在底层温度 T ₂ 底层上种的 10nm MnGa 电影被完成 > 450 的 S ?? 桴獩愠瑲捩敬 ? 敷搠浥湯瑳慲整琠慨 ? 潣瑮湩潵獵洠湯汯祡牥朠慲桰湥 ? 慣? 敢猠湹桴獥穩摥瘠慩挠敨業慣? 慶潰 ? 敤潰楳楴湯琠' 虦衬?畃映楯獬甠楳杮椠摮獵牴慩汬?慳敦朠獡洠硩畴敲 s

英文摘要：

MnGa films were grown by magnetron sputtering on thermally oxidized Si（Si/SiO2） and glass substrates. Films grown on single-crystal Si（100） substrate with different underlayers were prepared for comparison. It is found that the Si/SiO2 substrate is more suitable for growing high-coercivity MnGa films than the glass substrate, which is the result of the isolated-island-like growth. A coercivity of 9.7 kOe can be achieved for the 10 nm MnGa films grown on Si/SiO2 substrate at substrate temperature TS of 450 °C.Optimized experimental conditions are specified by changing the thickness of the MnGa films and the temperature of the substrates.