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A novel operation scheme for oxide-based resistive-switching memory devices to achieve controlled sw
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：0
  • 页码：282-284
  • 相关项目：氧化物基电阻存储器电阻开关特性的离子掺杂调控研究
作者： Chen, B.|Kang, J.F.|Gao, B.|Sheng, S.W.|Liu, L.F.|Liu, X.Y.|Chen, Y.S.|Wang, Y.|Han, R.Q.|Yu, B.|
同期刊论文项目
氧化物基电阻存储器电阻开关特性的离子掺杂调控研究
期刊论文 9 会议论文 2 专利 3
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