欢迎您!
东篱公司
退出
申报数据库
申报指南
立项数据库
成果数据库
期刊论文
会议论文
著 作
专 利
项目获奖数据库
位置:
成果数据库
>
期刊
> 期刊详情页
High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stabi
ISSN号:2045-2322
期刊名称:Scientific Reports
时间:2014.6.5
页码:5166-5166
相关项目:全同量子点晶格构筑及其量子态间耦合表征
作者:
Weihuang Yang, Jinchai Li*, Yong Zhang, Po-Kai Hu|Junyong Kang*|
同期刊论文项目
全同量子点晶格构筑及其量子态间耦合表征
期刊论文 19
同项目期刊论文
Performance evaluation ofmulti-junction solar cells by spatially resolved electroluminescence micros
Vacuum Rabi Splitting of Exciton-Polariton Emission in an AlN Film
单双层石墨烯的制备及电导特性调控
Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ul
Two-dimensional Au lattices featuring unique carrier transport preference and wide forbidden gap
Novel Evolution Process of Zn-Induced Nanoclusters on Si(111)-(7x7) Surface
纤锌矿结构ZnO(0001)-Zn和(000-1)-O极性表面稳定几何及电子结构性质
Au and Ti induced charge redistributions on monolayer WS2
Effects of thermally-induced changes of Cu grains on domain structure and electrical performance of
High Performance 3D Si/Ge Nanorods Array AnodeBuffered by TiN/Ti Interlayer for Sodium-Ion Batteries
Cubic ZnO films obtained atlow pressure by molecular beam epitaxy
Novel Evolution Process of Zn-Induced Nanoclusters on Si(111)-(737) Surface