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p-type doping of MgZnO films and their applications in optoelectronic devices
  • ISSN号：0146-9592
  • 期刊名称：Optics Letters
  • 时间：2015.7.1
  • 页码：3041-3044
  • 相关项目：立方相氧化锌基深紫外发光器件研究
作者： Y. J. Lu|B. H. Li|C. C. Ling|D. Z. Shen|
同期刊论文项目
立方相氧化锌基深紫外发光器件研究
期刊论文 31
同项目期刊论文
基于立方相MgZnO薄膜的高响应度深紫外探测器
Localized surface plasmon enhanced light-emitting devices
Electrically pumped random lasers fabricated from ZnO nanowire arrays
Ultraviolet emissions excited by accelerated electrons
Stable surface plasmon enhanced ZnO homojunction light-emitting devices
Surface plasmon enhanced ultraviolet light-emitting devices
Enhanced emission from ZnO-based double heterostructure light-emitting devices using a distributed B
Improved performance of ZnO light-emitting devices by introducing a hole-injection layer
Surface plasmon enhanced electrically pumped random lasers
Ultraviolet emissions realized in ZnO via an avalanche multiplication process
Reliable self-powered highly spectrum-selective ZnO ultraviolet photodetectors
Highly Sensitive Ultraviolet Photodetectors Fabricated from ZnO Quantum Dots/Carbon Nanodots Hybrid
Enhanced Responsivity of Photodetectors Realized via Impact Ionization
Plasma induced deep ultraviolet emissions from MgZnO films
Bias-Polarity Dependent Ultraviolet/Visible Switchable Light-Emitting Devices
ZnO-based ultraviolet avalanche photodetectors
利用金作为反射镜的氧化锌纳米棒光泵激光
梯度组分缓冲层诱导的单一立方相Mg0.3Zn0.7O薄膜外延生长