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具有N+浮空层的体电场降低(Rebulf) LDMOS结构耐压分析
  • 期刊名称：半导体学报,2006,27(4):730-734
  • 时间：0
  • 相关项目：单片功率系统集成（PSoC）的基础理论和技术研究
同期刊论文项目
单片功率系统集成（PSoC）的基础理论和技术研究
期刊论文 90
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Unified breakdown model of SOI RESURF device with uniform/ step/ linear doping profile
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On-state breakdown model for high voltage RESRURF LDMOS
有n埋层结构的1200V横向变掺杂双RESURF LDMOS研制
局域寿命控制NPT-IGBT 瞬态模型
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Output characteristics of n-buried-pSOI sandwiched rf power LDMOS
A novel double RESURF LDMOS and a versatile JFET device usedas internal power supply and current det
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部分局域电荷槽SOI高压器件新结构
New lateral super junction mosfets with n+-floating layer on high-resistance substrate
A high voltage BCD process using thin epitaxial technology
New high voltage SOI device with variable-thickness drift region and its optimization
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New thin-film power MOSFETs with a buried oxide double step structure
Realization of High Voltage (>700V) in New SOI Devices with a Compound Buried-Layer
A novel 1200-V LDMOSFET with floating buried layer in substrate
A novel high voltage LDMOS for HVIC with the multiple step shaped equipotential rings
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一种基于负载状态的分段式PSM调制模式
带P埋层表面注入硅基LDMOS模型与优化
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阶梯埋氧型SOI结构的耐压分析
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非均匀沟道MOS辐照正空间电荷迁移率模型
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具有非平面埋氧层的新型SOI材料的制备
具有高压互连线的多区双RESURF LDMOS击穿特性
单密勒电容补偿的三级误差运放电路
全耗尽型浮空埋层LDMOS的耐压特性
Boost变换器跨周期调制(PSM)的状态空间平均模型
背栅效应对SOI横向高压器件击穿特性的影响
An ultra-low specific on-resistance VDMOS with a step oxide-bypassed trench structure
双面阶梯埋氧层部分SOI高压器件新结构
New high-voltage (> 1200 V) MOSFET with the charge trenches on partial SOI
A new structure and its analytical model for the electric field and breakdown voltage of SOI high vo
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Thermal analytic model of current gain for Bipolar Junction Transistor-Bipolar Static Induction Tran
A novel super-junction lateral double-diffused metal–oxide–semiconductor field effect transistor wit
An analytical model for the surface electrical field distribution and optimization of bulk-silicon d
Realizing high breakdown voltage SJ-LDMOS on bulk silicon using a partial n-buried layer
Influence of the minority carrier extracted by the base electrode on current gain of bipolar power t
基于耦合式电平位移结构的高压集成电路
New power lateral double diffused metal-oxide-semiconductor transistor with a folded accumulation la
A new partial SOI power device struture with P-type buried layer
断续导通模式Buck变换器离散解析模型
埋空隙PSOI结构的耐压分析
断续导通模式Buck变换器跨周期调制离散解析模型
An advanced monolithic digitalized random carrier frequency spread-spectrum clock generator for EMI suppression
智能型高压SENSFET器件的设计分析和实现
基于薄外延技术的高压BCD兼容工艺
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高阻衬底上具有n^＋浮空层的横向Super Junction MOSFETs
具有部分n埋层的高压SJ-LDMOS器件新结构
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一种新的基于E-SIMOX衬底的PSOI高压器件
薄硅层阶梯埋氧PSOI高压器件新结构
A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device
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