中文摘要：

主要阐述采用金属催化化学腐蚀法制备硅纳米线。首先介绍了金属催化化学腐蚀法的基本原理和条件，然后探讨了催化金属的种类、腐蚀时间、腐蚀液浓度、硅衬底的晶向、掺杂浓度等各种因素对金属催化化学腐蚀法制备硅纳米线的影响。

英文摘要：

An overview is presented focusing on the preparation of silicon nanowires using metalassisted chemical etching. According tO the latest research, the basic mechanism and conditions in metalassisted chemical etching are introduced. And then the influence of various controllable parameters, such as the species of catalytic metal, etch ing time, the concentration of each component in the etehant, crystal orientation of the silicon substrate, doping con centration, etc. on the preparation of silicon nanowires in metalassisted chemical etching,are described.