中文摘要：

报道了一种由波长锁定878．6nm半导体激光器抽运Nd：YVO4晶体的1064nm激光器，当晶体吸收7．41W的抽运功率时获得了5．75W的1064nm激光输出，相对于吸收功率的斜率效率为80．2％，光光转换率为77．6％，并且对波长锁定878．6nm，非波长锁定的808nm，878．6nm抽运的激光器的温度特性进行了研究，结果表明利用波长锁定878．6nm作为抽运源的激光器在10℃～40℃的温度变化范围内具有很好的输出稳定性。

英文摘要：

A Nd： YVO4 laser at 1064 nm pumped by a wave-locked 878.6 nm laser diode is achieved. An output power of 5.75 W at 1064 nm for an absorbed pump power of 7.41 W, corresponding to an optical efficiency of 80.2%, optical to optical efficiency of 77.6%. The temperature characteristics of wave-locked 878.6 nm, wave-unlocked 808 nm and 878.6 nm pump laser are also researched. The result shows that wave-locked 878.6 nm pumped Nd： YVO4 laser has excellent output stability when the temperature varies from 10 ℃ to 40℃.