中文摘要：

通过将硅纳米孔柱阵列（Si-NPA）进行高温碳化处理，制备出一种SiC／Si-NPA复合纳米体系。对SiC／Si-NPA的表面形貌和结构表征揭示，生长于Si-NPA上的SiC薄膜由具有立方结构的SiC纳米颗粒组成，厚度为-200mm。SiC／Si-NPA整体上保持了Si-NPA原有的柱状阵列结构特征。对浓度介于0～1200×10-6的H2S气体的室温传感性能测试表明，SiC／Si-NPA对H2S气体的电容响应灵敏度可高达790％，而其对400×10-6浓度H2S气体的响应和恢复时间则分别为170s和200s，元件具有较好的测量重复性和稳定性。SiC／Si-NPA可能是一种室温条件下较为理想的H2S气体传感材料。

英文摘要：

Through a high-temperature thermal treatment process, the surface of silicon nanoporous pillar array （ Si- NPA） was carbonized and a SiC/Si-NPA nanocomposite system was prepared. The characterization on the surface morphology and structure disclosed that the SiC film grown on Si-NPA was composed of cubic-structure SiC nanoparticles with a thickness of -200 nm. The architectural feature of the regular pillar array for Si-NPA was remained in $iC/Si-NPA. The measurements on the room-temperature H2S sensing properties in a gas concentration range of 0 -1 200×10-6 proved that the capacitive response sensitivity of SiC/Si-NPA to H2S could be as high as 790% ,while the response and recovery times obtained for H2S gas with a concentration of 400 × 10-6 were determined to be - 170 s and 200 s, respectively. The sensor exhibited an excellent measurement reproducibility and stability. Our results indicated that SiC/Si-NPA might be an ideal sensing material for developing H2S gas sensors being operated at room temperature.