在室温和注入能量为60 keV的条件下,在硅晶片中注入C+,使其剂量达到5.0×1016cm-2,随后即对样品进行高温退火处理。采用X射线衍射(XRD),拉曼和光致发光(PL)光谱技术对样品进行了表征。实验结果显示:C+注入后经高温退火的样品的XRD图谱中,在40°附近处出现了衍射峰,表明经退火后样品中形成了纳米尺寸的SiC团簇,并观察到了强烈的蓝光发射。PL光谱中的蓝光峰起源于量子限制效应。
C+had been implanted into the bulk silicon with the energy to 60 keV and the dose of 5. 0 × 1016cm-2,at the room temperature. Then,the samples had been annealed at high temperatures. The samples had been characterized by the means of XRD, Raman and photoluminescence(PL) spectroscopy. A XRD peak was observed at 40° in the high temperature annealed samples,this indicated that the SiC clusters had formed induced by the annealing process. Also,the strong blue-light emission was observed using PL technique. It is proposed that the quantum confinement effects should respond to the blue light emission.