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Luminescence mechanism and energy level structure of Eu-doped GaN powders investigated by cathodolum
  • ISSN号：1869-1927
  • 期刊名称：Science China Physics,Mechanics and Astronomy
  • 时间：0
  • 页码：-
  • 相关项目：掺稀土GaN厚膜晶体衬底的HVPE生长、性能和发光机理研究
作者： 曾雄辉|
同期刊论文项目
掺稀土GaN厚膜晶体衬底的HVPE生长、性能和发光机理研究
期刊论文 12 专利 3
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