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Effects of Low-Frequency Source on a Dual-Frequency Capacitive Sheath near a Concave Electrode
  • ISSN号:1009-0630
  • 期刊名称:《等离子体科学与技术:英文版》
  • 时间:0
  • 分类:O536[理学—等离子体物理;理学—物理] TP273[自动化与计算机技术—控制科学与工程;自动化与计算机技术—检测技术与自动化装置]
  • 作者机构:[1]Department of Physics and Electronic Engineering, Handan College, Handan 056005, China, [2]School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023, China
  • 相关基金:supported by Handan Science and Technology Research and Development Project of China (No. 1121120069-5) and the Scientific Research Start-up Funds of Doctor and Master of Handan College of China (No. 2010005), National Natural Science Foundation of China (Nos. 11335004 and 11375040), the Important National Science and Technology Specific Project of China (No. 2011ZX02403-001)
中文摘要:

A self-consistent two-dimensional(2D) collisionless fluid model is developed to simulate the effects of the low-frequency(LF) power on a dual frequency(DF) capacitive sheath over an electrode with a cylindrical hole.In this paper,the time-averaged potential,electric field(Efield),ion density in the sheath,and ion energy distributions(IEDs) at the center of the cylindrical hole’s bottom are calculated and compared for different LF powers.The results show that the LF power is crucial for determining the sheath structure.As the LF power decreases,the potential drop decreases,the sheath becomes thinner,and the plasma molding effect seems to be more significant.The existence of a radial E-field near the sidewalls of a hole may cause a significant portion of ions to strike the sidewall and lead to the phenomenon of notching.

英文摘要:

A self-consistent two-dimensional (2D) collisionless fluid model is developed to sim- ulate the effects of the low-frequency (LF) power on a dual frequency (DF) capacitive sheath over an electrode with a cylindrical hole. In this paper, the time-averaged potential, electric field (E- field), ion density in the sheath, and ion energy distributions (IEDs) at the center of the cylindrical hole's bottom are calculated and compared for different LF powers. The results show that the LF power is crucial for determining the sheath structure. As the LF power decreases, the potential drop decreases, the sheath becomes thinner, and the plasma molding effect seems to be more significant. The existence of a radial E-field near the sidewalls of a hole may cause a significant portion of ions to strike the sidewall and lead to the phenomenon of notching.

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期刊信息
  • 《等离子体科学与技术:英文版》
  • 主管单位:中国科学院 中国科协
  • 主办单位:中国科学院等离子体物理研究所 中国力学学会
  • 主编:万元熙、谢纪康
  • 地址:合肥市1126信箱
  • 邮编:230031
  • 邮箱:pst@ipp.ac.cn
  • 电话:0551-5591617 5591388
  • 国际标准刊号:ISSN:1009-0630
  • 国内统一刊号:ISSN:34-1187/TL
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 美国化学文摘(网络版),荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,美国科学引文索引(扩展库),英国科学文摘数据库
  • 被引量:89