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High-Performance Programmable Memory Devices Based<br /> on Co-Doped BaTiO 3
  • ISSN号：0935-9648
  • 期刊名称：Advanced Materials
  • 时间：2011
  • 页码：1351-1355
  • 相关项目：磁性调控成相研究和新型磁性相变材料探索
作者： Z.B.Yan|Y.Y.Guo|G.Q.Zhang|J.M.Liu|
同期刊论文项目
磁性调控成相研究和新型磁性相变材料探索
期刊论文 108 会议论文 28
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