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Identifying Interface States in AlInN/GaN Heterostructure by Photocurrent Method
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2011.8.8
  • 页码：1071-1073
  • 相关项目：宽禁带半导体极化诱导能带调控原理及器件应用
作者： Chen, T. S.|Chen, D. J.|Lu, H.|Zhang, R.|Zheng, Y. D.|Li, L.|Dong, X.|Li, Z. H.|Chen, C.|
同期刊论文项目
宽禁带半导体极化诱导能带调控原理及器件应用
期刊论文 95 会议论文 29 专利 6
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