中文摘要：

用折光匹配显微技术（OMS）、表观密度浮沉法（SFM）、微聚焦CT扫描表征了HMX晶体内部缺陷尺寸、数量。结果表明,D-HMX较普通HMX含有较大尺寸内部缺陷的数量较少,普通HMX含有大量10-5mm^3以上缺陷,普通HMX和D-HMX晶体均含有大量10^-6mm^3量级以下缺陷。利用基于细观结构的冲击波效应数值模拟方法,研究了晶体内部缺陷尺寸对其冲击波温升效应的影响。模拟结果表明,在低压条件下,等效半径为20-40μm的内部缺陷在冲击波加载下温升较高,等效半径为10-15μm的内部缺陷温升相对较低。当冲击波压力增高至5.8GPa,等效半径为10μm内部孔洞在冲击波作用下温升可达到850K以上,两者的冲击波感度接近。

英文摘要：

The interior defects size and quantity of HMX had been studied and characterized by optical microscopy with matching refractive（OMS）,sink and float method（SFM）,and mirco-CT.The results indicated that the D-HMX contains less larger size internal defects than ordinary HMX.General HMX contains amounts of defects large than 10-5mm^3,both general HMX and D-HMX crystals contain a large number of defects small than 10-6mm^3.Take advantage of the shock wave effect numerical simulation methods based on meso-structure,the response of temperature effect of shock waves crystal aroused by interior defects size was studied.The simulation results show that at low-pressure conditions,the temperature rise of the internal defects with a radius of 20-40μm is higher than that of the internal defects with radius of 10-15μm under the same shock loading.When the shock wave pressure increased to 5.8GPa,the holes with an equivalent radius of 10μm can reach more than 850K under the shock wave effect,their shock sensitivity is close.