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中文摘要：
采用透射电子显微镜对CdZnTe晶体材料的缺陷特性进行了分析。在（111）面的透射电镜明场像中，观察到了棱柱位错环、位错墙、沉淀相、层错及倾斜的孪晶界面。应力是位错形成的主要原因，棱柱位错环的产生是由于沉淀相粒子在基体上产生错配应力；而位错网络与位错墙是两种热应力联合作用于晶体边缘的结果。晶体生长过程中，液固界面生长形态从平界面向胞状界面发展产生的沉淀相衬度不同于由于Te原子溶解度的回退产生的沉淀相衬度。CdZnTe晶体中的堆跺层错和孪晶与固液界面的稳定性相关。
英文摘要：
The dislocations, dislocation wall, precipitates, stacking faults and tilt twin boundaries in CdZnTe crystals grown by modified vertical bridgman method （MVB） are studied with transmission electron microscope （TEM）. The formation of dislocation loops are resulted from precipitates, and dislocations networks form in （111） plane of CdZnTe crystal because a special interaction between crystal thermal stress and ampoule stress occurs during cooling process of crystal. An intricate precipitates contrast depends on cellular solid-liquid interface and many spheric precipitates scattered on matrix were the results of solubility reduction of Te. Stacking faults and twins created by the growth conditions depended on the solid-liquid interface during the crystal growth.
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