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磁控溅射中工艺参数对ZnO：Al薄膜性能的影响
  • ISSN号：1001-5868
  • 期刊名称：《半导体光电》
  • 时间：0
  • 分类：TK514[动力工程及工程热物理—热能工程]
  • 作者机构：[1]华中科技大学电子科学与技术系,武汉430074, [2]湖北省光伏工程技术研究中心,武汉430074
  • 相关基金：国家自然科学基金重大资助项目（90407023）
作者： 徐玮[1], 于军[1], 王晓晶[1,2], 袁俊明[1], 雷青松[1]
关键词： 磁控溅射, 陶瓷靶材, 电阻率, 透过率, ZNO:AL薄膜, RF magnetron sputtering, ceramic target, resistivities, transmittance, ZnO ： Al films
中文摘要：

利用射频磁控溅射法，采用氧化锌铝（98％ZnO＋2％Al2O3）为靶材，在普通载玻片上制备了ZAO（ZnO：Al）薄膜，研究了溅射功率及溅射气压对薄膜晶体结构、电学和光学性能的影响。采用X射线衍射仪、场扫描电镜对薄膜的结构及表面形貌进行了分析，采用分光光度计和电阻率测试仪对薄膜的光电学性能进行了测试。结果表明，当溅射功率为120W、衬底温度为300℃、工作气压为0．5Pa时制得的薄膜具有良好的光电学性能，可见光平均透过率为88．21％，电阻率为8．28×10^-4Ω·cm。

英文摘要：

Thin films of transparent conductive aluminum-doped ZnO are deposited on the glass substate by the RF magnetron sputtering method with target of AlZnO（98%ZnO＋2%Al2O3 ）, the effects of process parameters on structure and optical and electronical properties of ZnO ： Al thin films are investigated by XRD, SEM, UV-visble spectrophotometry and four-point probe method. Experimental results indicate that the films prepared at substrate tempreture of 300℃ with RF power of 120W and working pressure of 0. 5 Pa have good optical and electronical properties,average transmittance of 88. 21% in the range of visible light and resistivities of 8.28×10^-4Ω·cm.

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期刊信息
  • 《半导体光电》
  • 中国科技核心期刊
  • 主管单位:信息产业部
  • 主办单位:中国电子科技集团公司第四十四研究所（重庆光电技术研究所）
  • 主编：江永清
  • 地址：重庆市南岸区南坪花园路14号
  • 邮编：400060
  • 邮箱：soe@163.net
  • 电话：023-65860286
  • 国际标准刊号：ISSN：1001-5868
  • 国内统一刊号：ISSN：50-1092/TN
  • 邮发代号:
  • 获奖情况:
  • 重庆市首届十佳期刊称号，1999年,信息产业部1999-2000年度优秀电子期刊称号
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:5924