中文摘要：

利用透射电子显微技术,对Zn2GeO4纳米线的微观结构以及元素成分进行了表征。采用STM-TEM电学测试样品杆在透射电子显微镜内原位构建一个基于Zn2GeO4纳米线的金属-半导体-金属（M-S-M）结构,在结构两端加电,发现随着辐照强度的增加,流过纳米线的电流增加且I-V曲线的开启电压减小。进一步分析表明这是由于金属电极中的电子受到更强的激发更容易越过金属与半导体形成的肖特基势垒,因此在原位TEM电学测试过程中,应该考虑到电子束辐照的影响,以便获得更加准确的测量结果。

英文摘要：

The microstructure of Zn2GeO4 nanowires and elemental composition were characterized by transmission electron microscopy（ TEM）. By using STM-TEM electrical test holder,Zn2GeO4 nanowire based metal-semiconductor-metal（ M-S-M） structure was insitu constructed inside the TEM. With the increase of irradiation intensity,the current through the nanowire increases and the open voltage of the I-V curve decreases. This is because the electron in metal electrode is strongly inspired,and it passes over the schottky barrier between metal and semiconductor more easily. Therefore,in order to obtain more accurate measurement results,consideration should be given to the influence of electron beam irradiation in the process of in-situ TEM electrical tests.