中文摘要：

采用金属有机化学气相沉积法制备了ZnO和ZnO∶Ni薄膜,并对它们的结构、光学和电学特性进行了对比研究.通过扫描电子显微镜（SEM）和X射线衍射（XRD）对薄膜的表面形貌和晶体结构进行了分析,结果表明,Ni元素的掺杂虽然降低了薄膜的晶体质量,但并未改变ZnO的纤锌矿结构.通过紫外-可见分光光度计对薄膜的光学特性进行了测试与分析,结果表明,ZnO∶Ni薄膜在可见光区的平均透过率可达90%,优于ZnO薄膜在可见光区的平均透过率（85%）.霍尔（Hall）测试显示ZnO∶Ni薄膜的导电类型仍为n型,但其电阻率已经明显增加,载流子浓度也远低于未掺杂ZnO薄膜的载流子浓度,说明Ni元素的掺杂对ZnO薄膜的特性产生了很大影响.

英文摘要：

ZnO and ZnO∶Ni films were prepared by metal organic chemical vapor deposition method,and their structure and physical properties were studied.The surface morphologies and crystal structures of the films were analyzed by scanning electron microscope（SEM） and X-ray diffraction（XRD） technique.The results showed that doped Ni can affect the surface morphology and the crystal structure of the ZnO film greatly.The optical characteristic was performed by UV-Vis spectrophotometer.Average transmittance of the ZnO∶Ni film was determined to be about 90% in the visible region,which is larger than that（85%）of the undoped ZnO film.The electrical characteristics were performed by Hall system.Resistivity of the ZnO∶Ni film was larger than that of the undoped ZnO film.Carrier concentration of the ZnO∶Ni film was much less than that of the undoped ZnO film.It was resulted from that Ni reduces the intrinsic donor defect concentration of ZnO film,and this avoids the strong self-compensate effect.Therefore,it is easier to acquire the p-type film by this way.