采用ZrO2、WO3复合氧化物和Cu靶材,利用磁控溅射法,通过改变溅射功率在单晶硅基片上分别制备1、3、5层Cu/ZrW2O8复合薄膜。通过X射线衍射、扫描电镜和原子力显微镜表征不同层薄膜的物相组成和表面形貌;采用划痕仪和应力测试仪分别测量薄膜的结合力和热应力。结果表明:未退火处理的薄膜为非晶态钨酸锆和铜的复合薄膜;在Ar2气氛中750℃退火处理3 min后的薄膜结晶度良好;5层膜中首次出现棒状ZrW2O8晶粒,且5层膜的表面和三维形貌最佳,膜基结合力最大,缓和热应力效果最好。
The Cu/ZrW2O8 gradient films with various layers were deposited on single crystal silicon substrates via a radio frequency magnetron sputtering with an oxide compound of ZrO2 and WO3 and copper as sputtering targets.The phase,surface and three-dimen-sional morphology of the films with different layers were characterized by X-ray diffractometer,scanning electron microscope and atomic force microscope.The cohesion and thermal stress of the films were measured using a scratch tester and a stress tester,respec-tively.The results indicate that the films without heat-treating appear amorphous.However,the films have a fine crystallinity after heat-treated at 750 ℃ for 3 min in Ar2 atmosphere.The rod-like grains of ZrW2O8 appeared in the five-layer films,which have the superior surface and three-dimensional morphology.The five-layer films could be most effective to reduce the thermal stress.