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铝离子注入到4H-SiC的表面粗糙度和离子激活研究
  • 期刊名称：Sci. China Technol. Sci
  • 时间：2012.12.5
  • 页码：3401-3404
  • 相关项目：HfAlO/4H-SiC MOSFETs功率器件研究
作者： 宋庆文，张玉明，张义门，汤晓燕|
同期刊论文项目
HfAlO/4H-SiC MOSFETs功率器件研究
期刊论文 13 会议论文 2
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