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Rediscovery of the role of the i-layer in n-ZnO/SiO2/p-GaN through observations from both the ZnO an
ISSN号:0361-5235
期刊名称:Journal of Electronic Materials
时间:2012
页码:3453-3456
相关项目:ZnO基垂直腔面发射激光器制备及其关键科学问题研究
作者:
Liu, Yu|a1|Liang, Hongwei1|Xia, Xiaochuan1|Bian, Jiming1|Shen, Rensheng1|Liu, Yang1|Luo, Yingmin1|Du, Guotong1, 2|
同期刊论文项目
ZnO基垂直腔面发射激光器制备及其关键科学问题研究
期刊论文 26
专利 4
同项目期刊论文
Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment
Dominant UV emission from p-MgZnO/n-GaN light emitting diodes
Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED
n-ZnO/p-GaN heterojunction light-emitting diodes with a polarization-induced graded-p-AlxGa1-xN elec
Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal
Influence of N-2 and O-2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu film
Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mod
Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal anneal
Photofacilitated Controllable Growth of ZnO Films Using Photoassisted Metal Organic Chemical Vapor D
High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN he
Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Dopi
SiN插入层对GaN外延膜应力和光学质量的影响(英文)
低温插入层对绿光LED的发光影响
喷淋头高度对InGaN/GaN量子阱生长的影响
衬底弯曲度对GaN基LED芯片性能的影响
MOCVD法生长Ga、P掺杂的ZnO薄膜