位置：成果数据库 > 期刊 > 期刊详情页
Study on structure of AlGaN on
  • 时间：0
  • 相关项目：二元光学微结构GaN基发光器件研究
作者： Z. X.QIN, H.J.Luo, Z. Z. Chen,
同期刊论文项目
二元光学微结构GaN基发光器件研究
期刊论文 29 会议论文 9
同项目期刊论文
The reactive ion etching chara
Effect of Al doping in the InG
GaN基LED电流扩展的有限元模型及电极结构优化
Focused ion beam etched nitrid
Influence of growth rate on st
Modified transmission line mod
Study of the structural damage
Studies of improving light ext
Reduction of threading edge di
Cathodoluminescence study of I
Length dependence of polarizat
Optimization of the Electron B
Influence of Pt Barrier on Ti/
Strain Effect on Photoluminesc
Influence of V/III flux ratio
p型GaN的Ni/Au合金电极的I-V特性
GaN基激光器多量子阱结构的性能表征与结构优化
GaN基激光器电子阻挡层的优化分析
GaN基紫光LED的可靠性研究
三元系和四元系GaN基量子阱结构的显微结构
Mg掺杂的AlxGa1-xN/GaN超晶格紫外峰的性质
铟对GaN基激光器晶体质量的影响
MOCVD生长的p型GaN薄膜中Mg掺杂的优化与分析
Influence of patterned TiO2/SiO2 dielectric multilayers for back and front mirror facets on GaN-based laser diodes