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Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current
  • ISSN号：1674-4926
  • 期刊名称：Chinese Journal of Semiconductors
  • 时间：2012
  • 页码：0640041-0640043
  • 分类：TN304.23[电子电信—物理电子学] TB34[一般工业技术—材料科学与工程]
  • 作者机构：[1]Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China, [2]Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 相关基金：supported by the National Natural Science Foundation of China（Nos.10990102,60890192,60876009）
  • 相关项目：紫外-红外双色探测材料和器件新原理研究
作者： Gu, Guodong|Cai, Yong|Feng, Zhihong|Liu, Bo|Zeng, Chunhong|Yu, Guohao|Dong, Zhihua|Zhang, Baoshun|
关键词： 漏电流密度, 氮化镓, 闸, 线性外推法, 氧化技术, 阈值电压, 传输特性, 栅偏压, enhancement-mode InAlN/GaN HEMT threshold voltage thermal oxidation gate leakage
中文摘要：

<正>We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under gate.The off-state source-drain current density is as low as～1017 A/mm at VGS= 0 V and VDS = 5 V.The threshold voltage is measured to be +0.8 V by linear extrapolation from the transfer characteristics.The E-mode device exhibits a peak transconductance of 179 mS/mm at a gate bias of 3.4 V.A low reverse gate leakage current density of 4.9×1017 A/mm is measured at VGS =-15 V.

英文摘要：

We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under gate.The off-state source-drain current density is as low as～10~（17） A/mm at V_（GS）= 0 V and V_（DS） = 5 V.The threshold voltage is measured to be ＋0.8 V by linear extrapolation from the transfer characteristics.The E-mode device exhibits a peak transconductance of 179 mS/mm at a gate bias of 3.4 V.A low reverse gate leakage current density of 4.9×10~（17） A/mm is measured at V_（GS） =-15 V.

同期刊论文项目
InAlN/GaN无应变新异质结场效应晶体管材料研究
期刊论文 33 会议论文 10 获奖 1 专利 4
紫外-红外双色探测材料和器件新原理研究
期刊论文 55
GaN基功率器件与材料可靠性基础问题研究
期刊论文 44 会议论文 7 获奖 2 专利 19
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期刊信息
  • 《半导体学报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编：李树深
  • 地址：北京912信箱
  • 邮编：100083
  • 邮箱：cjs@semi.ac.cn
  • 电话：010-82304277
  • 国际标准刊号：ISSN：1674-4926
  • 国内统一刊号：ISSN：11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 被引量:7754