中文摘要：

利用ZnO和GaN材料制备了ZnO：Al／n．ZnO／p-GaN透明电极异质结发光二极管。通过SEM、TEM和荧光光谱对ZnO纳米棒进行了结构表征和发光特性表征。通过半导体特性分析系统和光谱测试技术对ZnO：Al／n-ZnO／p—GaN异质结进行了电致发光性能测试和机理分析。结果表明该器件能产生有效的蓝紫色电致发光，其发光分别来自于n型ZnO、P型OaN以及界面辐射；并且采用ZnO：Al作为透明电极可以提高该器件的出光效率。该异质结可应用于高效率短波发光器件。

英文摘要：

A heterostructured ZnO：A1/n-ZnO/p-GaN transparent electrode lighting-emitting diode was fabricated using n-ZnO and p-GaN materials. The structure and electroluminescence properties ofZnO nanorods were characterized by SEM, TEM and fluorescence spectrum. The properties and mechanism of electroluminescence were measured and analyzed by semiconductor parameter system and spectrometer. The result shows that ZnO：A1/n-ZnO/p-GaN device could emit effective blue-violet electroluminescence which is originated from n-ZnO, p-GaN and interface emission, in addition, adopting ZnO：AI as the transparent electrode can improve the light extraction efficiency of the light-emitting diode. The heterojunction can be applied in the field of high efficiency shortwavelength light-emitting device.