位置：成果数据库 > 期刊 > 期刊详情页
Binding energy of ionized-donor-bound excitons in the GaAs-AlxGa1-xAs quantum wells
  • 期刊名称：Chinese Phys. Lett.
  • 时间：0
  • 作者或编辑：3448
  • 页码：2000,Vol. 17, 358
  • 语言：英文
  • 相关项目：利用相互作用量子点进行量子计算的基础物理研究
作者： Liu Jian-Jun|Zhang Shu-Fang|Kong Xiao-Jun|and Li Shu-Shen|
同期刊论文项目
利用相互作用量子点进行量子计算的基础物理研究
期刊论文 15
同项目期刊论文
Exciton energy of Inas/GaAs self-assembled quantum dot in semiconductor microcavity
Effective of lattice vibration on self-trapping energy of polaron of electron-surface phonons strong
量子计算机
Influence of electron-surface phonon strong-coupling on properties of plolaron in CdF2 semiconductor
Quantum computing
Quantum-confined Stark effects of InAs/GaAs self-assembled quantum dot
Electronic states of InAs/GaAs quantum ring
量子通信与量子计算
Binding energy of positively and negatively charged excitons in GaAs-AlxGa1-xAs quantum wells
Dephasing rate in a InAs/GaAs single-electron quantum dot qubit
固态量子计算
Electron and hole transport through quantum dots
Valence band structures of InAs/GaAs quantum ring