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中文摘要：
通过射频磁控溅射技术在Si（111）衬底上制备了未掺杂和Nd掺杂ZnO薄膜，研究了衬底温度、氧分压以及Nd不同掺杂浓度等工艺参数对薄膜的影响。薄膜的结构和表面形貌通过XRD分析和AFM观测，表明制备的薄膜为ZnO：Nd纳米多晶薄膜，其表面形貌粗糙，不同沉积条件对薄膜生长有很大的影响。在纯氩气氛中、衬底温度为300℃的条件下，ZnO：Nd薄膜具有c轴择优取向。
英文摘要：
The ZnO thin film and Nd-doped ZnO thin films were deposited on Si（111） substrate by RF magnetron sputtering technique. The relationships of microstructure, surface morphology and orientation of Nd-doped ZnO films with the deposition parameters, such as substrate temperature, oxygen partial pressure, and Nd-contents were investigated by X-ray diffraction （XRD） and atomic force microscopy（AFM）. It is found that the orientation and microstructure of Nd-doped ZnO thin films are strongly affected by the deposition temperature and oxygen partial pressure and Nd-contents. Therefore, the various deposition conditions are further investigated and compared in detail to obtain the sputtering conditions, the substrate temperature of 300℃, Ar sputtering gases, the annealing temperature of 400℃. An Nd-doped ZnO thin films with high c-axis orientation are realized.
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