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Characterization of Ni(Si,Ge) films on epitaxial SiGe(100) formed by microwave annealing
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2012.8.27
  • 页码：1-5
  • 相关项目：超薄可控金属硅化物的形成工艺及机理研究
作者： Noroozi, Mohammad|Radamson, Henry|Wu, Dongping|Zhang, Shi-Li|
同期刊论文项目
超薄可控金属硅化物的形成工艺及机理研究
期刊论文 22 会议论文 4
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