中文摘要：

对接生长技术可以独立优化不同区域的波导结构，有利于制作高性能的半导体光电子集成器件,文中采用MOCVD对接生长技术制作了SGDBR激光器，通过载流子注入，器件准连续调谐范围为35nm，在调谐范围内边模抑制比大于30dB．

英文摘要：

We demonstrate a ridge waveguide sampled-grating distributed-feedback laser with quasi-continuous wavelength coverage over a 35nm range. The design is based on a 320nm-thick butt jointed passive waveguide optimized for carrier injection tuning. The butt-joint technology enable optimize the passive waveguide as well as active section. By tuning mirror sections,the laser provides 35nm tuning while maintaining 〉30dB sidemode suppression ratio.