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中文摘要：
采用了飞秒光电导相关技术首次在以低温生长砷化镓（LT-GaAs）为衬底材料的槽线电极结构上产生亚皮秒电脉冲，并对其脉宽与传输特性进行了测量研究，得到电脉冲初始的半高全宽（FWHM）约为0.7ps，传输速度约为真空中光速的1／2．3倍；观察到电脉冲在传输过程中的强度衰减和脉冲的增宽，其衰减系数为20dB／mm，并测得脉冲传输至420后展宽至2．86ps．实验测量值与理论预期值相符．
英文摘要：
Subpicosecond electrical pulses were generated and characterized in slotlines fabricated on LT-GaAs substrate for the first time, in our knowledge, by using femtosecond photoconductive correlation techniques. The measured pulse width is 0. 7ps at the generation site. The velocity of the pulses propagating in the slotlines is 1/2.3 of the light velocity in vacuum and the estimated attenuation coefficient of the electrical pulses is 20dB/mm. The pulse is broadened to 2.86ps after propagating distance of 420 along the slotlines. The measured parameters are consistent with the predicted values.
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