中文摘要：

利用金属有机物化学气相淀积（MOCVD）技术在蓝宝石衬底上生长了InGaN：Mg薄膜,对不同源流量In-GaN：Mg材料特性进行了研究。光学和电学特性观测表明,当外延生长温度在760℃,三甲基铟（TMIn）摩尔流量不变时,随CP2Mg和Ⅲ族源摩尔比（[CP2Mg]/[Ⅲ]）增加,当In摩尔成分增加,空穴浓度也线性增加;当[CP2Mg]/[Ⅲ]比为1.12×10-3时获得4.78×1019cm-3高空穴浓度。通过原子力显微镜（AFM）观察到粗化的表面,采用InGaN：Mg薄膜作为接触层制备的发光二极管（LED）比常规LED的电荧光强度提高28%。

英文摘要：

InGaN：Mg films were grown by metal-organic chemical vapor deposition（MOCVD）,and the properties of InGaN：Mg the materials with different source fluxes were studied.The optical and electrical properties show that when epitaxial growth temperature is at 760 ℃,the TMIn molar flux is certain,the In molecomposition increases with the increase of CP2Mg and Ⅲ family source molar ratio（/[Ⅲ]）,and the hole concentration also increases linearly.When /[Ⅲ] is 1.12×10-3,the high hole concentration of 4.78×1019 cm-3 is obtained.Moreover,the electro-luminescence intensity of the light-emitting diodes（LEDs） with InGaN：Mg as contact layer is enhanced by 28% compared with conventional LEDs.