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一种SRAM辅助新型非易失性缓存的磨损均衡方法
  • ISSN号:0254-4164
  • 期刊名称:《计算机学报》
  • 时间:0
  • 分类:TP303[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术] TP333[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术]
  • 作者机构:[1]武汉大学计算机学院,武汉430072, [2]武汉大学软件工程国家重点实验室,武汉430072, [3]合肥工业大学计算机与信息学院,合肥230009
  • 相关基金:国家自然科学基金(91118003,61170022,61373039,61402145,61502346,61640220,61662002); 湖北省自然科学青年基金(2015CFB338); 安徽省自然科学青年基金(1508085QF138); 江西省教育厅科技项目(GJJ150605)资助
中文摘要:

随着半导体工艺的发展,处理器集成的片上缓存越来越大,传统存储器面临着存储密度低和漏电功耗高等问题日益严峻.近年来,新型非易失性存储技术展现出漏电功耗低、存储密度高和可扩展性强等优点,是最有潜力构建大容量缓存的新技术.然而,非易失性存储器的写操作次数有限,作为缓存将限制其寿命.同时缓存上的写操作是不均匀的,存在缓存组间和组内的写波动,这一访问特点将导致缓存的每部分磨损不均衡,现有的缓存管理策略却不能感知缓存的写波动.为解决这一问题,提出了SRAM辅助新型非易失性缓存的磨损均衡(SRAM-assistEd weAr Leveling,SEAL)方法,该方法包含写波动感知的缓存块迁移算法(Write Variation-aware blOck Migration,WVOM)和阈值指导的缓存块迁移算法(Threshold gUided Block mIgration,TUBI).SEAL方法重点关注写波动大的缓存组和写强度高的缓存单元,着力减少这部分缓存单元的写压力.WVOM感知缓存组间写波动并迁移写强度大的缓存组,用于解决组间磨损均衡问题.TUBI迁移缓存组内写局部性高的缓存块来达到组内磨损均衡.实验结果表明,SEAL方法与基准配置相比,缓存的磨损程度平均减少了34.2%,缓存的平均寿命提升了175%,性能平均提高了0.735%,系统的动态功耗平均降低了5.65%.同时,SEAL方法与最新的研究成果相比,缓存的磨损程度平均减少了13.1%,缓存的平均寿命提升了20%.

英文摘要:

With the development of semiconductor technology and complementary metal oxide semiconductor(CMOS)scaling,the size of on chip cache memory gradually increases in modern processor design.The storage cell density of traditional static random access memory(SRAM)is very low and SRAM has been close to the limit due to its physical property.Furthermore,SRAM consumes a large amount of leakage power which could severely affect the whole system performance.In recent years,the emerging non-volatile memory(NVM)has shown a lot of attractive features,such as low leakage power,high storage density and better scalability.The NVM based cache design has become one of the most promising candidates to build large on chip caches in themodern processor architecture.However,both of these NVMs suffer from high write latency and limited write endurance problems.The lifetime of on chip non-volatile caches will be constrained by these issues when we use NVM to architect the cache.What's more,the write operation on cache is unbalanced distribution in the cache set and there exist write variations among inter sets and intra sets.These cache access characteristics will lead to uneven wear for each cache storage cells.Unfortunately,the wear leveling approaches for NVM based main memories could not be simply used to NVM based on chip caches because main memories only have inter set variations.Meanwhile,most of the existing cache management policies are write variation unaware at present.This situation might result in unbalanced write traffic to every cache cells,which causing heavily written cells will fail much earlier than the others.To solve the write endurance problems,this paper proposes a novel technique named SRAM assistEd weAr Leveling(SEAL)for non-volatile caches to minimize both inter and intra set write variations.SEAL contains two algorithms:Write Variation-aware blOck Migration algorithm(WVOM)and Threshold gUided Block mIgration algorithm(TUBI).The main idea of the SEAL scheme focuses on the high write

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期刊信息
  • 《计算机学报》
  • 北大核心期刊(2011版)
  • 主管单位:中国科学院
  • 主办单位:中国计算机学会 中国科学院计算技术研究所
  • 主编:孙凝晖
  • 地址:北京中关村科学院南路6号
  • 邮编:100190
  • 邮箱:cjc@ict.ac.cn
  • 电话:010-62620695
  • 国际标准刊号:ISSN:0254-4164
  • 国内统一刊号:ISSN:11-1826/TP
  • 邮发代号:2-833
  • 获奖情况:
  • 中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 美国数学评论(网络版),荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊(2004版),中国北大核心期刊(2008版),中国北大核心期刊(2011版),中国北大核心期刊(2014版),中国北大核心期刊(2000版)
  • 被引量:48433