中文摘要：

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英文摘要：

To many MEMS devices in high temperature environment,SiC direct bonding has very significant application value,however,the surface treatment of SiC wafer becomes a key of direct bonding.In the design,the improved wet cleaning method and a plasma treatment were used to treat the wafer surface,thus the wafer that meets cleanliness and roughness to direct bonding was obtained.Finally,hot embossing technology was used successfully to achieve SiC direct bonding and obtain the ideal bonding strength and its bonding is about 14.47 MPa.