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Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random acce
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2013.4.4
  • 页码：164507-
  • 相关项目：过渡金属氧化物基阻变存储器界面工程及其对性能优化的研究
作者： Chen, Y. S.|Chen, B.|Gao, B.|Liu, L. F.|Liu, X. Y.|Kang, J. F.|
同期刊论文项目
过渡金属氧化物基阻变存储器界面工程及其对性能优化的研究
期刊论文 10
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