采用脉冲激光沉积法在FTO基片上制备铌酸银薄膜,并运用XRD、UV-Vis和AFM等方法对薄膜样品进行表征和分析。研究了薄膜的光电化学性质。结果表明,样品含有Ag2Nb4O11 和AgNbO3两相。其光电化学研究结果表明在低偏压区有较大的光电流密度。另外,混合相薄膜的最大光电流和稳态光电流的比值Ip/Is小于纯相AgNbO。薄膜的值,此结果说明混相薄膜具有较低的表面电子空穴复合率。
Silver niobate thin films on FTO conducting glass substrates were fabricated by pulsed laser deposition. The crystal structure, transmittance spectrum and morphology were determined by an X-ray diffractometer, UV-vis spectrophotometer and Atomic Force Microscope, respectively. Photoelectrochemical properties of silver niobate thin film were studied. The results showed that AgENb4O11-AgNbO3 thin film achieves a higher photocurrent density at a lower biased region. The maximum photocurrent and steady state photocurrent(Ip/Is ) of Ag2NbaO11-AgNbO3 film is lower than that of AgNbO3 film, which illustrates that the mixed-phase thin film has a lower electron-hole recombination rate