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中文摘要：
对热氧化制备的TiO2薄膜的低压压敏特性进行了研究。首先利用直流磁控溅射方法在重掺Si衬底上沉积一层金属钛膜,然后在退火炉中热氧化得到TiO2薄膜。XRD分析结果表明,Ti金属膜热氧化所得的TiO2薄膜为金红石结构,当热氧化温度600～800℃时呈现（200）择优取向性。I-V测试结果表明,择优取向的TiO2薄膜相对非择优取向的TiO2薄膜具有更高的压敏阈值电压。进一步分析表明,阈值电压与择优取向性的关系起源于薄膜厚度的变化。
英文摘要：
Low voltage varistor characteristic of TiO2 thin films obtained by thermal oxidized was studied.First,Ti metal films were prepared on n＋ Si by DC magnetron sputtering deposition.Then,TiO2 thin films were obtained by thermal oxidation.X-ray diffraction（XRD）analysis indicates that the crystalline structures are all rutile,and the rutile form with preferential orientation along the（200）planes are observed when the temperature ranged600-800 ℃.I-V characteristics show that TiO2 thin films with preferential orientation have higher threshold voltage.Further analysis shows that the relationship between threshold voltage and preferential orientation results from thickness.
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The effect of doping by IV-family elements on the electronic structure and electrical characteristic
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