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Fabrication and characterization of graphene derived from SiC
ISSN号:1674-7313
期刊名称:Science China Earth Sciences
时间:2013.12.12
页码:2386-2394
相关项目:自由站立石墨烯的制备和物理特性研究
作者:
JIA YuPing, GUO LiWei*, LU Wei, GUO Yu, LIN JingJi|
同期刊论文项目
自由站立石墨烯的制备和物理特性研究
期刊论文 14
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A comparison of the ?eld emission characteristics of vertically aligned graphene sheets grown on dif
Fabrication of vertically aligned graphene sheets on SiC substrates
Preparation of Quasi-Free-Standing Graphene with a Super Large Interlayer Distance by Methane Interc
Wafer-scale graphene on 2 inch SiC with uniform structural and electrical characteristics
Anharmonic phonon effects in Raman spectra of unsupported vertical graphene sheets
Approaching the Intrinsic Electron Field-Emission of a Graphene Film Consisting of Quasi-Freestandin
Effect of 6H-SiC (11(2)over-bar0) substrate on epitaxial graphene revealed by Raman scattering
A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates
Influence of defects in SiC (0001) on epitaxial graphene
Effect of 6H-SiC (1120) substrate on epitaxial graphene revealed by Raman scattering