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中文摘要：
采用WO3和Al2O3陶瓷靶材，以双靶交替射频磁控溅射法，在石英基片上沉积制备了Al2（WO4）3薄膜。利用X射线衍射仪（XRD）、扫描电子显微镜（SEM），研究了退火温度对Al2（WO4）3薄膜的相组成和表面形貌的影响，采用表面粗糙轮廓仪和划痕仪测量薄膜厚度，探索了薄膜的制备工艺以及薄膜与基片的结合力，采用高温X射线衍射和晶胞参数指标化软件，初步研究了薄膜热膨胀特性。实验结果表明：磁控溅射沉积制备的这种薄膜为非晶态，表面平滑、致密，随着热处理温度的升高，薄膜开始结晶且膜层颗粒增大，在950℃热处理10min后得到Al2（WO4）3薄膜，薄膜与基片的结合力为13．6N，薄膜物质热膨胀特性呈各向异性。
英文摘要：
The Al2 （WO4）3 films were grown by magnetron sputtering of WO3 and Al2O3 targets, subsequently, on quartz substrates. The Al2（WO4）3 films were characterized with X-ray diffraction（XRD） and scanning electron microscopy （SEM）. The results show that the annealing temperature significantly affects the microstructures and stoichiometry of the film. The smooth, compact films were found to be amorphous with fairly strong interfacial adhesion. As the annealing tem- perature rises up, the crystallized grains grow in the films with rather high surface defect density. As it rises up from room temperature to 800 ℃, the unit cell volume initially increases and then decreases. The variations in unit ceil were evaluated. The films show anisotropic negative thermal expansion. The averaged thermal expansion coefficients of a-, b-, and c-axes were found to be - 3.25× 10^- 6 K- 1,5.15× 10^- 6 K- 1 and - 2.64× 10^- 6 K^- 1d, respectively; and an averaged volume thermal expansion of -0.69×10^-6K^- 1
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